IXA17IF1200HJ
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IXYS SEMICONDUCTOR IXA17IF1200HJ IGBT Single Transistor, 28 A, 2.1 V, 100 W, 1.2 kV, TO-247AD, 3 Pins
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Buying Options
Total Price: USD $7.84
Unit Price: USD $7.844861
≥1 USD $7.844861
≥10 USD $7.400813
≥100 USD $6.981905
≥500 USD $6.5867
≥1000 USD $6.213863
Inventory: 1185
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 28A
Reverse Recovery Time 350 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 110 ns
Test Condition 600V, 15A, 56 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
Gate Charge 47nC
Switching Energy 1.55mJ (on), 1.7mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Dimensions
Height 21.34mm
Length 16.13mm
Width 5.21mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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