FIO50-12BD
RoHS
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Package i4-Pac?-5
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 50A 200W I4PAC5
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac?-5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature UL RECOGNIZED
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
JESD-30 Code R-PSIP-T5
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 50A
Reverse Recovery Time 150ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 135 ns
Test Condition 600V, 30A, 39 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Turn Off Time-Nom (toff) 490 ns
IGBT Type NPT
Gate Charge 150nC
Switching Energy 4.6mJ (on), 2.2mJ (off)
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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