Gate-Emitter Voltage-Max 20V
Switching Energy 1mJ (on), 1.4mJ (off)
Turn Off Time-Nom (toff) 330 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Test Condition 300V, 30A, 22 Ω, 15V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 70ns
Max Collector Current 65A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 300 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ