Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.1mJ (on), 600μJ (off)
Turn Off Time-Nom (toff) 390 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 25A
Test Condition 300V, 25A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 50 ns
Max Collector Current 38A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 125W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ