SIGC57T120R3LEX1SA3
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 50A DIE
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 150A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Dual Supply Voltage 1.2kV
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 1.2kV
Input Type Standard
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2014
Packaging Bulk
Physical
Package / Case Die
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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