IRGSL6B60KDPBF
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 13A 90W TO262
PDF
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Buying Options
Total Price: USD $0.98
Unit Price: USD $0.9768
≥1 USD $0.9768
Inventory: 1325
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.652mm
Technical
Fall Time-Max (tf) 27 ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 110μJ (on), 135μJ (off)
Td (on/off) @ 25°C 25ns/215ns
Current - Collector Pulsed (Icm) 26A
Gate Charge 18.2nC
IGBT Type NPT
Turn Off Time-Nom (toff) 258 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Test Condition 400V, 5A, 100 Ω, 15V
Turn On Time 45 ns
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 70 ns
Max Collector Current 13A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Rise Time 17 ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 90W
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 13A
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 90W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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