IRGSL4062DPBF
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 48A 250W TO262
PDF
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Buying Options
Total Price: USD $2.26
Unit Price: USD $2.2616
≥1 USD $2.2616
Inventory: 32849
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.83mm
Length 10.67mm
Height 9.65mm
Technical
Fall Time-Max (tf) 41 ns
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 115μJ (on), 600μJ (off)
Td (on/off) @ 25°C 41ns/104ns
Current - Collector Pulsed (Icm) 96A
Gate Charge 50nC
IGBT Type Trench
Turn Off Time-Nom (toff) 164 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Test Condition 400V, 24A, 10 Ω, 15V
Turn On Time 64 ns
Collector Emitter Saturation Voltage 1.95V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 89 ns
Max Collector Current 48A
Collector Emitter Voltage (VCEO) 1.95V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 250W
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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