IRGSL14C40LPBF
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 430V 20A 125W TO262AA
PDF
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Buying Options
Total Price: USD $4.75
Unit Price: USD $4.75285
≥1 USD $4.75285
≥10 USD $3.9007
≥100 USD $3.77815
≥500 USD $3.65655
≥1000 USD $3.53495
Inventory: 7010
Minimum: 1
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Technical Details
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.652mm
Technical
Gate-Emitter Thr Voltage-Max 2.2V
Gate-Emitter Voltage-Max 12V
Td (on/off) @ 25°C 900ns/6μs
Gate Charge 27nC
Vce(on) (Max) @ Vge, Ic 1.75V @ 5V, 14A
Turn On Time 3700 ns
Collector Emitter Saturation Voltage 1.4V
Collector Emitter Breakdown Voltage 430V
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 1.75V
Polarity/Channel Type N-CHANNEL
Rise Time 2.8μs
Transistor Application AUTOMOTIVE IGNITION
Input Type Logic
Power Dissipation 125W
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 20A
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 125W
Voltage - Rated DC 430V
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SATURATION VOLTAGE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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