IRGS6B60KDTRRP
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 13A 90W D2PAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Switching Energy 110μJ (on), 135μJ (off)
Td (on/off) @ 25°C 25ns/215ns
Current - Collector Pulsed (Icm) 26A
Gate Charge 18.2nC
IGBT Type NPT
Turn Off Time-Nom (toff) 258 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Test Condition 400V, 5A, 100 Ω, 15V
Turn On Time 45 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 70 ns
Max Collector Current 13A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 90W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number IRGS6B60KDPBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 90W
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
JESD-609 Code e3
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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