IRGS4B60KPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
INFINEON IRGS4B60KPBF IGBT Single Transistor, 12 A, 2.5 V, 63 W, 600 V, TO-263, 3 Pins
PDF
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Buying Options
Total Price: USD $0.86
Unit Price: USD $0.860711
≥1 USD $0.860711
≥10 USD $0.811987
≥100 USD $0.76603
≥500 USD $0.722665
≥1000 USD $0.681759
Inventory: 1235
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 63W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 63W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 23ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 40 ns
Test Condition 400V, 4A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Turn Off Time-Nom (toff) 199 ns
IGBT Type NPT
Gate Charge 12nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 22ns/100ns
Switching Energy 73μJ (on), 47μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 89ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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