Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 73μJ (on), 47μJ (off)
Td (on/off) @ 25°C 22ns/100ns
Current - Collector Pulsed (Icm) 22A
Turn Off Time-Nom (toff) 199 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Test Condition 400V, 4A, 100 Ω, 15V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 93 ns
Max Collector Current 11A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IRGS4B60KD1PBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 63W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ