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IRGS4B60KD1PBF

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 11A 63W D2PAK
PDF
/
Buying Options
Total Price: USD $30.12
Unit Price: USD $30.12165
≥1 USD $30.12165
≥10 USD $24.7152
≥100 USD $23.94285
≥500 USD $23.1705
≥1000 USD $22.39815
Inventory: 1975
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 9.652mm
Length 10.668mm
Height 4.699mm

Technical

Fall Time-Max (tf) 89 ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 73μJ (on), 47μJ (off)
Td (on/off) @ 25°C 22ns/100ns
Current - Collector Pulsed (Icm) 22A
Gate Charge 12nC
IGBT Type NPT
Turn Off Time-Nom (toff) 199 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Test Condition 400V, 4A, 100 Ω, 15V
Turn On Time 40 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 93 ns
Max Collector Current 11A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Rise Time 23 ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 63W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number IRGS4B60KD1PBF
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 11A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 63W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2003
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 13 Weeks

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