Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 70μJ (on), 145μJ (off)
Td (on/off) @ 25°C 30ns/95ns
Current - Collector Pulsed (Icm) 24A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 8A
Test Condition 400V, 8A, 47 Ω, 15V
Collector Emitter Saturation Voltage 2V
Current - Collector (Ic) (Max) 23A
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 60 ns
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 1.85V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 99W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ