Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 70μJ (on), 145μJ (off)
Td (on/off) @ 25°C 30ns/95ns
Current - Collector Pulsed (Icm) 24A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 8A
Test Condition 400V, 8A, 47 Ω, 15V
Collector Emitter Saturation Voltage 1.55V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 60 ns
Max Collector Current 23A
Collector Emitter Voltage (VCEO) 1.85V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 99W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ