Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 101W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.91V
Max Collector Current 20A
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.91V @ 15V, 10A
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 29μJ (on), 200μJ (off)
Td (on/off) @ 25°C 27ns/79ns
Current - Collector Pulsed (Icm) 40A