Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGS4062DPBF
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 48A
Reverse Recovery Time 89 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Turn Off Time-Nom (toff) 164 ns
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V