Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 30V
Td (on/off) @ 25°C 44ns/245ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A
Test Condition 180V, 35A, 10 Ω
Power Dissipation-Max (Abs) 255W
Current - Collector (Ic) (Max) 110A
Voltage - Collector Emitter Breakdown (Max) 300V
Polarity/Channel Type N-CHANNEL
Reach Compliance Code compliant
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ