Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 56μJ (on), 122μJ (off)
Td (on/off) @ 25°C 27ns/75ns
Current - Collector Pulsed (Icm) 18A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Test Condition 400V, 6A, 47 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 74 ns
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 2V
Turn-Off Delay Time 75 ns
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 77W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ