Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 350μJ (on), 825μJ (off)
Td (on/off) @ 25°C 46ns/185ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 237 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 78A
Collector Emitter Voltage (VCEO) 2.35V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IRGS30B60KPBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 370W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ