IRGS15B60KPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 31A 208W D2PAK
PDF
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Buying Options
Total Price: USD $1.2
Unit Price: USD $1.1968
≥1 USD $1.1968
Inventory: 1200
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 220μJ (on), 340μJ (off)
Td (on/off) @ 25°C 34ns/184ns
Current - Collector Pulsed (Icm) 62A
Gate Charge 56nC
IGBT Type NPT
Turn Off Time-Nom (toff) 231 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Test Condition 400V, 15A, 22 Ω, 15V
Turn On Time 52 ns
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 208W
Element Configuration Single
Rise Time-Max 22ns
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 208W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 11 Weeks
Alternative Model
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