Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 220μJ (on), 340μJ (off)
Td (on/off) @ 25°C 34ns/184ns
Current - Collector Pulsed (Icm) 62A
Turn Off Time-Nom (toff) 231 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Test Condition 400V, 15A, 22 Ω, 15V
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 92 ns
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IRGS15B60KDPBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 208W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ