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IRGS10B60KDPBF

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 22A 156W D2PAK
PDF
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Buying Options
Total Price: USD $0.97
Unit Price: USD $0.96805
≥1 USD $0.96805
≥10 USD $0.7942
≥100 USD $0.7695
≥500 USD $0.7448
≥1000 USD $0.7201
Inventory: 1255
Minimum: 1
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Technical Details

Dimensions

Length 10.668mm
Width 9.652mm
Height 4.699mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 140μJ (on), 250μJ (off)
Td (on/off) @ 25°C 30ns/230ns
Current - Collector Pulsed (Icm) 44A
Gate Charge 38nC
IGBT Type NPT
Turn Off Time-Nom (toff) 276 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Test Condition 400V, 10A, 47 Ω, 15V
Turn On Time 50 ns
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 90 ns
Max Collector Current 22A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Rise Time 20 ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 156W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number IRGS10B60KDPBF
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 22A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 156W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 13 Weeks

Alternative Model

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