Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 56μJ (on), 122μJ (off)
Td (on/off) @ 25°C 27ns/75ns
Current - Collector Pulsed (Icm) 18A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Test Condition 400V, 6A, 47 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.14V
Current - Collector (Ic) (Max) 16A
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 74 ns
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 2V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 77W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ