Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 56μJ (on), 122μJ (off)
Td (on/off) @ 25°C 27ns/75ns
Current - Collector Pulsed (Icm) 18A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Test Condition 400V, 6A, 47 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 74 ns
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 2V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 77W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ