Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 62μJ (on), 39μJ (off)
Td (on/off) @ 25°C 18ns/110ns
Current - Collector Pulsed (Icm) 15.6A
Turn Off Time-Nom (toff) 211 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Test Condition 400V, 3A, 100 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 77 ns
Max Collector Current 7.8A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IRGR3B60KD2PBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 52W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ