Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 52W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGR3B60KD2PBF
Element Configuration Single
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 7.8A
Reverse Recovery Time 77 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Test Condition 400V, 3A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Turn Off Time-Nom (toff) 211 ns
Current - Collector Pulsed (Icm) 15.6A
Td (on/off) @ 25°C 18ns/110ns
Switching Energy 62μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 105 ns