IRGR2B60KDTRPBF
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 6.3A 35W DPAK
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Fall Time-Max (tf) 75ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 74μJ (on), 39μJ (off)
Td (on/off) @ 25°C 11ns/150ns
Current - Collector Pulsed (Icm) 8A
Gate Charge 12nC
IGBT Type NPT
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 2A
Test Condition 400V, 2A, 100 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 68 ns
Max Collector Current 6.3A
Collector Emitter Voltage (VCEO) 2.25V
Polarity/Channel Type N-CHANNEL
Power - Max 35W
Input Type Standard
Element Configuration Single
Rise Time-Max 25ns
Base Part Number IRGR2B60
Max Power Dissipation 35W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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