IRGR2B60KDPBF
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 6.3A 35W DPAK
PDF
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Buying Options
Total Price: USD $5.61
Unit Price: USD $5.61165
≥1 USD $5.61165
≥10 USD $4.60465
≥100 USD $4.46025
≥500 USD $4.3168
≥1000 USD $4.1724
Inventory: 11002
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Fall Time-Max (tf) 75ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 74μJ (on), 39μJ (off)
Td (on/off) @ 25°C 11ns/150ns
Current - Collector Pulsed (Icm) 8A
Gate Charge 12nC
IGBT Type NPT
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 2A
Test Condition 400V, 2A, 100 Ω, 15V
Collector Emitter Saturation Voltage 1.95V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 68 ns
Max Collector Current 6.3A
Collector Emitter Voltage (VCEO) 2.25V
Polarity/Channel Type N-CHANNEL
Power - Max 35W
Input Type Standard
Element Configuration Single
Rise Time-Max 25ns
Base Part Number IRGR2B60
Max Power Dissipation 35W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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