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IRGP50B60PDPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 75A 370W TO247AC
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Buying Options
Total Price: USD $5.91
Unit Price: USD $5.9071
≥1 USD $5.9071
≥10 USD $4.8469
≥100 USD $4.6949
≥500 USD $4.54385
≥1000 USD $4.3928
Inventory: 45
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5.3086mm
Length 15.87mm
Height 24.99mm

Technical

Fall Time-Max (tf) 65 ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 360μJ (on), 380μJ (off)
Td (on/off) @ 25°C 34ns/130ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 240nC
IGBT Type NPT
Turn Off Time-Nom (toff) 190 ns
Continuous Collector Current 75A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Test Condition 390V, 33A, 3.3 Ω, 15V
Turn On Time 59 ns
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AC
Reverse Recovery Time 50 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 140 ns
Polarity/Channel Type N-CHANNEL
Rise Time 26 ns
Transistor Application POWER CONTROL
Turn On Delay Time 33 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 370W
Element Configuration Single
Number of Elements 1
Current Rating 75A
Max Power Dissipation 370W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Published 2004
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Factory Lead Time 14 Weeks

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