Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 360μJ (on), 380μJ (off)
Td (on/off) @ 25°C 34ns/130ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 190 ns
Continuous Collector Current 75A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Test Condition 390V, 33A, 3.3 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 50 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 140 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 370W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ