Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 390W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 130 ns
Collector Emitter Voltage (VCEO) 2.85V
Max Collector Current 75A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V
Test Condition 390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A
Turn Off Time-Nom (toff) 161 ns
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/130ns
Switching Energy 255μJ (on), 375μJ (off)
Gate-Emitter Voltage-Max 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ
Gate-Emitter Thr Voltage-Max 5V