Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 330W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 100A
Reverse Recovery Time 115 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 48A
Current - Collector Pulsed (Icm) 144A
Td (on/off) @ 25°C 60ns/145ns
Switching Energy 625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V