Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 390μJ (on), 632μJ (off)
Td (on/off) @ 25°C 46ns/105ns
Current - Collector Pulsed (Icm) 105A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 35A
Test Condition 400V, 35A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 120 ns
Max Collector Current 76A
Collector Emitter Voltage (VCEO) 1.9V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 268W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ