Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 100μJ (on), 600μJ (off)
Td (on/off) @ 25°C 40ns/105ns
Current - Collector Pulsed (Icm) 72A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A
Test Condition 400V, 24A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 65A
Collector Emitter Voltage (VCEO) 1.9V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Base Part Number IRGP4640
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ