Gate-Emitter Thr Voltage-Max 7.7V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.5mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C 50ns/200ns
Current - Collector Pulsed (Icm) 300A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Test Condition 400V, 75A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 170 ns
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 455W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ