Gate-Emitter Thr Voltage-Max 7.7V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.2mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C 80ns/200ns
Current - Collector Pulsed (Icm) 300A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Test Condition 400V, 75A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 450W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ