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IRGP4263DPBF

Infineon Technologies
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 650V 90A 325W TO-247
PDF
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Buying Options
Total Price: USD $4.18
Unit Price: USD $4.18
≥1 USD $4.18
Inventory: 341
Minimum: 1
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Technical Details

Technical

Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A
Gate Charge 145nC
Current - Collector Pulsed (Icm) 192A
Td (on/off) @ 25°C 70ns/140ns
Switching Energy 2.9mJ (on), 1.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.7V
Fall Time-Max (tf) 50ns
Test Condition 400V, 48A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 170 ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Power - Max 325W
Input Type Standard
Element Configuration Single
Rise Time-Max 80ns
Max Power Dissipation 325W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Tube
Operating Temperature -40°C~175°C TJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

Physical

Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 14 Weeks

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