Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A
Current - Collector Pulsed (Icm) 192A
Td (on/off) @ 25°C 70ns/140ns
Switching Energy 2.9mJ (on), 1.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.7V
Test Condition 400V, 48A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 170 ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 325W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ