IRGP4263D-EPBF
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 90A 325W TO-247
PDF
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Buying Options
Total Price: USD $4.24
Unit Price: USD $4.2416
≥1 USD $4.2416
Inventory: 5872
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Fall Time-Max (tf) 50ns
Gate-Emitter Thr Voltage-Max 7.7V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.9mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C 70ns/140ns
Current - Collector Pulsed (Icm) 192A
Gate Charge 145nC
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A
Test Condition 400V, 48A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 170 ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Power - Max 325W
Input Type Standard
Element Configuration Single
Rise Time-Max 80ns
Max Power Dissipation 325W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2014
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 15 Weeks
Alternative Model
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