IRGP4263-EPBF
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 90A 300W TO-247
PDF
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Buying Options
Total Price: USD $3.86
Unit Price: USD $3.85985
≥1 USD $3.85985
≥10 USD $3.1673
≥100 USD $3.0685
≥500 USD $2.96875
≥1000 USD $2.86995
Inventory: 33006
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 5.13mm
Length 15.87mm
Height 20.7mm
Technical
Fall Time-Max (tf) 50ns
Gate-Emitter Thr Voltage-Max 7.7V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.7mJ (on), 1mJ (off)
Td (on/off) @ 25°C 70ns/140ns
Current - Collector Pulsed (Icm) 192A
Gate Charge 150nC
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A
Test Condition 400V, 48A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Power - Max 300W
Input Type Standard
Element Configuration Single
Rise Time-Max 80ns
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2012
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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