Gate-Emitter Thr Voltage-Max 7.7V
Gate-Emitter Voltage-Max 20V
Switching Energy 520μJ (on), 240μJ (off)
Td (on/off) @ 25°C 24ns/73ns
Current - Collector Pulsed (Icm) 96A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 24A
Test Condition 400V, 24A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 170 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ