Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.1mJ (off)
Td (on/off) @ 25°C -/116ns
Current - Collector Pulsed (Icm) 150A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Test Condition 400V, 50A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 74A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 278W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ