Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 409μJ (on), 838μJ (off)
Td (on/off) @ 25°C 18ns/144ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 309 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 40A
Test Condition 240V, 40A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 300V
Reverse Recovery Time 122 ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 180W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ