IRGP4069-EPBF
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 76A 268W TO247
PDF
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Buying Options
Total Price: USD $2.41
Unit Price: USD $2.4112
≥1 USD $2.4112
Inventory: 7698
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 268W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Rise Time-Max 42ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 268W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 76A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 78 ns
Test Condition 400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 35A
Turn Off Time-Nom (toff) 188 ns
IGBT Type Trench
Gate Charge 104nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 46ns/105ns
Switching Energy 390μJ (on), 632μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 54ns
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Alternative Model
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