Gate-Emitter Thr Voltage-Max 6.5V
Switching Energy 625μJ (on), 1.28mJ (off)
Td (on/off) @ 25°C 60ns/145ns
Current - Collector Pulsed (Icm) 144A
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Test Condition 400V, 48A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.65V
Gate to Source Voltage (Vgs) 30V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 96A
Collector Emitter Voltage (VCEO) 2.14V
Turn-Off Delay Time 165 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 330W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ