Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 625μJ (on), 1.28mJ (off)
Td (on/off) @ 25°C 60ns/145ns
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Test Condition 400V, 48A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.05V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 115 ns
Max Collector Current 96A
Collector Emitter Voltage (VCEO) 2.14V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Base Part Number IRGP4063D
Max Power Dissipation 330W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ