Gate-Emitter Thr Voltage-Max 6.5V
Switching Energy 625μJ (on), 1.28mJ (off)
Td (on/off) @ 25°C 60ns/145ns
Current - Collector Pulsed (Icm) 144A
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Test Condition 400V, 48A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 96A
Collector Emitter Voltage (VCEO) 2.14V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 330W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ