IRGP35B60PDPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 308W TO247AC
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Buying Options
Total Price: USD $9.4
Unit Price: USD $9.3974
≥1 USD $9.3974
≥10 USD $7.71115
≥100 USD $7.46985
≥500 USD $7.2295
≥1000 USD $6.9882
Inventory: 1148
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 308W
Current Rating 60A
Number of Elements 1
Element Configuration Single
Power Dissipation 308W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 26 ns
Transistor Application POWER CONTROL
Rise Time 6 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 110 ns
Collector Emitter Voltage (VCEO) 2.55V
Max Collector Current 60A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.85V
Turn On Time 34 ns
Test Condition 390V, 22A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
Turn Off Time-Nom (toff) 142 ns
IGBT Type NPT
Gate Charge 160nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 26ns/110ns
Switching Energy 220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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