Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 95μJ (on), 100μJ (off)
Td (on/off) @ 25°C 20ns/115ns
Current - Collector Pulsed (Icm) 80A
Turn Off Time-Nom (toff) 138 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Test Condition 390V, 13A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.05V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 2.8V
Turn-Off Delay Time 115 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 220W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ