IRGP20B120U-EP
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 40A 300W TO247AD
PDF
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Buying Options
Total Price: USD $3.18
Unit Price: USD $3.17965
≥1 USD $3.17965
≥10 USD $2.60965
≥100 USD $2.52795
≥500 USD $2.44625
≥1000 USD $2.36455
Inventory: 1100
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 300W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4.85V
Max Collector Current 40A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.05V
Turn On Time 70 ns
Test Condition 600V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4.85V @ 15V, 40A
Turn Off Time-Nom (toff) 228 ns
IGBT Type NPT
Gate Charge 169nC
Current - Collector Pulsed (Icm) 120A
Switching Energy 850μJ (on), 425μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Alternative Model
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