Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 156μJ (on), 165μJ (off)
Td (on/off) @ 25°C 25ns/180ns
Current - Collector Pulsed (Icm) 32A
Turn Off Time-Nom (toff) 288 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Test Condition 400V, 10A, 50 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 79 ns
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Max Power Dissipation 44W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~175°C TJ