IRGC4630B
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT CHIP WAFER
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
VCEsat-Max 1.325 V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 160 ns
Turn On Time 65 ns
Current - Collector (Ic) (Max) 30A
Voltage - Collector Emitter Breakdown (Max) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Configuration SINGLE
Number of Elements 1
JESD-30 Code S-XUUC-N2
Terminal Form NO LEAD
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2013
Packaging Bulk
Operating Temperature 175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case Die
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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