IRGB4B60KD1PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 11A 63W TO220AB
PDF
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8096
≥1 USD $0.8096
Inventory: 57535
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 63W
Current Rating 11A
Number of Elements 1
Element Configuration Single
Power Dissipation 63W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 18 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 11A
Reverse Recovery Time 93 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 40 ns
Test Condition 400V, 4A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Turn Off Time-Nom (toff) 199 ns
IGBT Type NPT
Gate Charge 12nC
Current - Collector Pulsed (Icm) 22A
Td (on/off) @ 25°C 22ns/100ns
Switching Energy 73μJ (on), 47μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 89 ns
Dimensions
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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